Full PDF Text Transcription for 28F256 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
28F256. For precise diagrams, and layout, please refer to the original PDF.
FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low po...
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TERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 10,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from –1 V to V CC +1 V s Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase s Flashrite Programming — 10 µs typical byte-program — 0.
28F256 Datasheet
